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Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626
Optosystems Ardis 100 P220210626

Optosystems Ardis 100 Verified seller

Price on request

Manufacturer Optosystems
Model Ardis 100
Year 2011
Location Estonia EE
Category Semiconductor - Test and measurement equipment
Product id P220210626
Language
cs Meřící stroj Optosystems Ardis 100
de Optosystems Ardis 100 Prüf- und Messgerät
en Optosystems Ardis 100
es Máquina de prueba y medición Optosystems Ardis 100
fr Equipement de test et mesure Optosystems Ardis 100
it Macchina di misurazione Optosystems Ardis 100
pl Maszyna testująca Optosystems Ardis 100
ru Optosystems Ardis 100 Контрольно-измерительный прибор
tr Ölçüm Makinası Optosystems Ardis 100
MW plasma-enchanced CVD diamond system with 2-inch reactor for deposition of high-purity poly-, mono- and nanocrystal diamond films as well as carbon nanotubes from gas mixture (4 channels). Used for diamond AFM probe manufacture (see scdprobes.com), no Boron doping used. Power: up to 6 kW at 2.45 GHz, gas flow: 0,1 to 60 L/h, main mixtures: ?2/??4, ?2/??4/?2, Ar/H2/CH4, doping: N2 (NV color centers). Controlled wafer temperature up to 1200 deg. Deposition speed: up to 6 um/hr. Visual control, water cooling, automated control.

Please note that this description may have been translated automatically. Contact us for further information. The information of this classified ad are only indicative. Exapro recommends to check the details with the seller before a purchase

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Worked hours
Hours under power
State good
At local norms ---------
Status
Client type Consultant
Active since 2021
Offers online 3443
Last activity May 29, 2023

Description

MW plasma-enchanced CVD diamond system with 2-inch reactor for deposition of high-purity poly-, mono- and nanocrystal diamond films as well as carbon nanotubes from gas mixture (4 channels). Used for diamond AFM probe manufacture (see scdprobes.com), no Boron doping used. Power: up to 6 kW at 2.45 GHz, gas flow: 0,1 to 60 L/h, main mixtures: ?2/??4, ?2/??4/?2, Ar/H2/CH4, doping: N2 (NV color centers). Controlled wafer temperature up to 1200 deg. Deposition speed: up to 6 um/hr. Visual control, water cooling, automated control.

Please note that this description may have been translated automatically. Contact us for further information. The information of this classified ad are only indicative. Exapro recommends to check the details with the seller before a purchase

Specifications

-------------------
Worked hours
Hours under power
State good
At local norms ---------
Status

About this seller

Client type Consultant
Active since 2021
Offers online 3443
Last activity May 29, 2023

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Optosystems Ardis 100